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Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

European Journal of Interdisciplinary Studies

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Title Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures
 
Creator Güllü, Ömer
 
Description This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.
 
Publisher EUSER
 
Date 2016-08-30
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Peer-reviewed Article
 
Identifier http://journals.euser.org/index.php/ejis/article/view/1881
10.26417/ejis.v5i1.p7-17
 
Source European Journal of Interdisciplinary Studies; Vol 5 No 1 (2016): May-August 2016; 7-17
2411-4138
2411-958X
10.26417/ejis.v5i1
 
Language eng
 
Relation http://journals.euser.org/index.php/ejis/article/view/1881/1863